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maximum ratings and electrical characteristics (r atings at 25 c ambient temperature unless other wise specified ,single phase ,half wave ,resistive or inductive load. f or capacitive load, derate by 20%.) features mechanical data case : jedec ito -220a c molded plastic body t erminals : l ead solderable per mil -std -750,method 2026 p olarity : as mark ed mounting p osition : any w eight : 0.08ounce, 2.24 gram dimensions in inches and (millimeters) plastic pack age has under writers l aborator y flammability classification 94v -0 metal silicon junction ,majority carrier conduction guard ring for over voltage protection l ow power loss ,high efficiency high current capability ,l ow for ward voltage drop high surge capability f or use in low voltage ,high frequency inver ters, free wheeling ,and polarity protection applications dual rectifier construction high temperature soldering guaranteed:260 c/10 seconds,, 0.25"(6.35mm)from case component in accordance to r ohs 2002 / 95 / ec and weee 2002 / 96 / ec notes : 1.pulse test: 300 s pulse width,1% duty cycle 2.thermal resistance from junction to case s r f 2 0 2 0 t h r u s r f 2 0 2 0 0 ( s i n g l e c h i p ) schottky barrier rectifier reverse voltage - 20 to 200 volts forward current - 20amperes maximum repetitive peak reverse voltage v rrm v olts v olts v olts v olts m a a mps a mps v rms v dc i (a v) i f sm t stg v f i r r jc maximum rms voltage maximum dc blocking voltage maximum instantaneous for ward voltage at 20.0 a t =25 c t =125 c c c t ypical thermal resistance (note 2) operating junction temperature range storage temperature range maximum instantaneous reverse current at rated dc blocking voltage(note 1) p eak for ward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) -65 to+150 -65 to+150 3.0 0.2 30 50 0 . 7 0 c/w c c t j 20 14 20 30 21 30 40 28 40 50 35 50 60 42 60 80 56 80 100 70 150 20.0 200.0 symbols units srf 2020 srf 2030 srf 2040 srf 2050 srf 2060 srf 2080 srf 20100 maximum average for ward rectified current see f ig . 1 srf 20150 srf 20200 150 105 200 140 200 100 s r f 2 0 6 0 0.60 0 . 9 0 0 . 7 5 0 . 8 5 0 . 9 5 it o-220ac 0.177(4.50) 0.208(5.28) 0.029(0.73) 0.111(2.83) 0.140(3.55) 0.610(15.50) 0.136(3.45) 0.187(4.75) 0.272(6.90) 0.551(14.00) 0.029(0.73) 0.138(3.50) 0.192(4.88) 0.019(0.47) 0.101(2.57) 0.128(3.25) dia 0.571(14.50) 0.102(2.60) 0.167(4.25) 0.256(6.50) 0.496(12.60) 0.019(0.47) pin 0.388(9.85) 1 2 0.130(3.31) 0.11 0(2. 81) 0 . 4 1 0 ( 1 0 . 4 2 ) 0.056(1.43) 0.043(1.10) 1.161(29.50) 1.083(27.50) x h e?o?? xinghe electronics gaomi xinghe electronics co.,ltd. www.sddzg.com 1
0.001 0.01 1 0.1 10 50 80 120 160 100 140 20 0 40 60 80 100 1 10 100 fig.1-forward current derating curve fig.2-maximum non-repetitive peak forward surge current fig.3-typical instantaneous forward characteristics fig.4-typical reverse characteristics i n s t a n t a n e o u s f o r w a r d c u r r e n t ( a m p e r e s ) i n s t a n t a n e o u s r e v e r s e c u r r e n t ( m a ) p e a k f o r w a r d s u r g e c u r r e n t ( a m p e r e s ) instantaneous forward voltage (volts) reverse voltage. volts t, pulse duration ,sec. percent of rated peak reverse voltage% number of cycles at 60hz t j =t j max 8.3ms single half sine-wave (jedec method) t j =125 c t j =25 c t j =75 c 1 10 0.1 0.1 0.1 0.01 1 1 10 10 100 100 100 1000 4000 100 fig.5-typical junction capacitance fig.6-typical transient thermal impedance j u n c t i o n c a p a c i t a n c e ( p f ) t r a n s i e n t t h e r m a l i m p e d a n c e , c / w t j =25 c f=1.0mh z vsig=50mvp-p 0 50 100 150 0 4 12 8 20 16 a v e r a g e f o r w a r d c u r r e n t a m p e r e s lead temperature ( c) inductive or resistive load 0.01 0.1 1 50 10 0 0.2 0.1 0.3 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 pulse width=300 s 1% duty cycle t j =125 c t j =25 c 180 200 r at i n g s a n d c h a r a c t e r i s t i c c u r v e s s r f 2 0 2 0 t h r u s r f 2 0 2 0 0 ( s i n g l e c h i p ) e?o?? xinghe electronics gaomi xinghe electronics co.,ltd. www.sddzg.com 2

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